Hot-selling and scarce JS28F256P30TF Embedded Memory IC TSOP-56 spot stock

​Product Features

 High performance

—100 ns initial access for Easy BGA

—110 ns initial access for TSOP

—25 ns 16-word asynchronous-page read mode

—52 MHz with zero WAIT states, 17ns clock-to data output synchronous-burst read mode

—4-, 8-, 16-, and continuous-word options for burst mode

—Buffered Enhanced Factory Programming (BEFP) at 2.0 MByte/s (Typ) using 512-word buffer

—1.8 V buffered programming at 1.5MByte/s (Typ) using 512-word buffer

Architecture

—Multi-Level Cell Technology: Highest Density at Lowest Cost

—Asymmetrically-blocked architecture

—Four 32-KByte parameter blocks: top or bottom configuration

—128-KByte main blocks

—Blank Check to verify an erased block

Voltage and Power

—V CC (core) voltage: 1.7 V – 2.0 V

———VS5CaQnMdH(Occo)unorienl:s:5y.7AchVr(To.Vrre5d-Murei;t: 21mA (Typ)/24mA(Max)

Security

—One-Time Programmable Register:

• 64 unique factory device identifier bits

• 2112 user-programmable OTP bits

—Absolute write protection: V PP = V SS

—Power-transition erase/program lockout

—Individual zero-latency block locking

—Individual block lock-down

—Password Access feature

Software

—20 µs (Typ) program suspend

—20 µs (Typ) erase suspend

—Numonyx™ Flash Data Integrator optimized

—Basic Command Set and Extended Function

Interface (EFI) Command Set compatible

—Common Flash Interface capable

Density and Packaging

— 56-Lead TSOP package (256-Mbit only)

— 64-Ball Easy BGA package (256, 512-Mbit)

— Numonyx™ QUAD+ SCSP (256, 512-Mbit)

—16-bit wide data bus

Quality and Reliability

—Operating temperature: –40 °C to +85 °C

—Minimum 100,000 erase cycles per block

—ETOX™ X process technology

Product Photos

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