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Hot-selling and scarce DMN3730UFB-7 30V N-CHANNEL ENHANCEMENT MODE MOSFET DFN1006 spot stock
DMN3730UFB-7 30V N-CHANNEL ENHANCEMENT MODE MOSFET DFN1006 spot stock
Product Features
• 0.5mm ultra low profile package for thin application
• 0.6mm2 package footprint, 10 times smaller than SOT23
• Low VGS(th), can be driven directly from a battery
• Low RDS(on)
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• ESD Protected Gate 2kV
• Qualified to AEC-Q101 Standards for High Reliability
Product Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
• Load switch
• Portable applications
• Power Management Functions
Product Specification
| Attribute | Attribute value |
| ANSM-Part# | ANSM-DMN3730UFB-7 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | - |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Digi-Reel® | |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id)@ 25°C | 750mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 460mOhm @ 200mA, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.6 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 64.3 pF @ 25 V |
| Power Dissipation (Max) | 470mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | X1-DFN1006-3 |
| Package / Case | 3-UFDFN |
| Base Product Number | DMN3730 |
Product Photos

For more product information, please download the PDF