Hot-selling and scarce IRF7205 HEXFET Power MOSFET SOP8 spot stock

Product Descriptions

Fourth  Generation  HEXFETs  from  International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications.    With  these  improvements,  multiple devices can be used in an application with dramatically reduced board space.  The package is designed for vapor phase, infra red,or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.​

Product Features

Adavanced Process Technology

Ultra Low On-Resistance

P-Channel MOSFET

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Fast Switching

Product Photos

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