Hot-selling and scarce NT5TU64M16GG-3CI 1Gb DDR2 SDRAM FBGA spot stock

Product Descriptions

The  1giga  bit  (1Gb)  Double-Data-Rate-2  (DDR2)  DRAMs  is  a  high-speed  CMOS  Double  Data  Rate 2  SDRAM containing 1,073,741,824 bits. It is internally configured as an octal-bank DRAM.

The 1Gb chip is organized as 16Mbit x 8 I/O x 8 bank or 8Mbit x 16 I/O x 8 bank device. These synchronous devices achieve high speed double-data-rate transfer rates of up to 1066 Mb/sec/pin for general applications.

The chip is designed to comply with all key DDR2 DRAM key features: (1) posted CAS with additive latency, (2) write latency =  read  latency -1,  (3)  normal  and weak  strength data-output driver,  (4) variable data-output  impedance adjustment and (5) an ODT (On-Die Termination) function.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion.A13 bit address bus for x8 organized components and A12 bit address bus for x16 component is used to convey row, column, and bank address devices.

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These devices operate with a single 1.8V ± 0.1V power supply and are available in BGA packages.

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WhenCE is HIGH (deselected),the device assumes a standby mode at which the power dissipation can be reduced down to250 µW (typical) with CMOS input levels.