One stop electronic component supply IPP65R150CFD 650V 22.4A (Tc) 195.3W (Tc) Metal Oxide Semiconductor Field Effect Transistor

Manufacturer

INFINEON

Manufacturer Product Number

IPP65R150CFD

Description

Trans MOSFET N-CH 650V 22.4A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube

Package Condition

TUBE

Datasheet

IPP65R150CFD

Product Details
Reviews

Product Descriptions

CoolMOSTm is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by nfineon Technologies. 650V COOlMOSTM CFD2 seriescombines the experience of the leading SJ

MOSFET supplier with highclass innovation. The resulting devices provide all benefits of a fastswitching SJ MOSFET while offering an extremely fast and robust bodydiode. This combination of extremely low switching, commutation andconduction

losses together with highest robustness make especiallyresonant switching applications more reliable, more efficient, lighter andcooler.

Product Features

Ultra-fast body diode

Very high commutation ruggedness

Extremely low losses due to very low FOM Rdson*Qg and Eoss

Easy to use/drive

Qualified for industrial grade applications according to JEDEC(J-STD20 and JESD22)

Pb-free plating, Halogen free for mold compound

Product Applications

650V COOlMOSTM CFD2 is especially suitable for resonant switching PWMstages for e.g. PC Silverbox, LCD TV, Lighting, Server,Telecom and Solar.

Specifications

Attribute	Attribute value
ANSM-Part#	ANSM-IPP65R150CFD
Category	Discrete Semiconductor Products
	Transistors
	FETs, MOSFETs
	Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolMOS™
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	22.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	150mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2340 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	195.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3
Base Product Number	IPP65R150