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Hot sale Original IPB107N20N3G Transistors MOSFET N-Channel 200 V 88A (Tc) 300W (Tc) Surface Mount PG-TO263-3
Manufacturer
Manufacturer Product Number
IPB107N20N3G
Description
Original IPB107N20N3G Transistors MOSFET N-Channel 200 V 88A (Tc) 300W (Tc) Surface Mount PG-TO263-3
Package Condition
Tape & Reel (TR) Cut Tape (CT)
Product Description
The IPB107N20N3G is a high-power N-channel power MOSFET from Infineon Technologies, designed to provide reliable and efficient switching solutions for various applications. This device is part of the company's extensive portfolio of power semiconductors, offering exceptional performance and reliability.
Product Features
· High continuous drain current (Id) of 88A at 25°C, making it suitable for high-power applications
· High drain-to-source voltage (Vdss) of 200V, enabling safe operation in high-voltage environments
· Low Rds(on) of 10.7mΩ at Id=88A, Vgs=10V, reducing power loss and improving efficiency
· High power dissipation of 300W at Ta=25°C, allowing for high-power handling
· RoHS compliant, ensuring environmental sustainability and compliance with international regulations
Product Applications
· Primary applications:
· High-power switching in automotive and industrial applications
· Power conversion and conditioning in renewable energy systems
· High-voltage power supplies and inverters
· Secondary applications:
· High-power motor control and drives
· High-voltage battery management and charging systems
· High-power LED lighting and display applications
Product Description
|
ANSC PART# |
ANSC- IPB107N20N3G |
|
Part# |
IPB107N20N3G |
|
Type： |
Transistors |
|
Manufactor |
Original |
|
DC |
new |
|
Part Status |
Active |
Product images
Product Attributes
|
Type |
Description |
|---|---|
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
Infineon Technologies |
|
Series |
OptiMOS™ |
|
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
|
Part Status |
Active |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
200 V |
|
Current - Continuous Drain (Id) @ 25°C |
88A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
10V |
|
Rds On (Max) @ Id, Vgs |
10.7mOhm @ 88A, 10V |
|
Vgs(th) (Max) @ Id |
4V @ 270µA |
|
Gate Charge (Qg) (Max) @ Vgs |
87 nC @ 10 V |
|
Vgs (Max) |
±20V |
|
Input Capacitance (Ciss) (Max) @ Vds |
7100 pF @ 100 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
300W (Tc) |
|
Operating Temperature |
-55°C ~ 175°C (TJ) |
|
Mounting Type |
Surface Mount |
|
Supplier Device Package |
PG-TO263-3 |
|
Package / Case |
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
|
Base Product Number |
IPB107 |
Product datasheet
For more information, please download
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Original IPB107N20N3G Transistors MOSFET N-Channel 200 V 88A (Tc) 300W (Tc) Surface Mount PG-TO263-3
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