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Hot-selling and scarce STP12N65M5 N-Channel 650 V 8.5A (Tc) 70W (Tc) Through Hole TO-220 spot stock
STP12N65M5 N-Channel 650 V 8.5A (Tc) 70W (Tc) Through Hole TO-220 spot stock
Product Descriptions
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Product Features
• Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested
Product Applications
• Switching applications
Product Specification
| Attribute | Attribute value |
| ANSM-Part# | ANSM-STP12N65M5 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | - |
| Series | MDmesh™ V |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 4.3A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 100 V |
| Power Dissipation (Max) | 70W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
| Base Product Number | STP12 |
Product Photos

For more product information, please download the PDF