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Hot-selling and scarce STP12N65M5 N-Channel 650 V 8.5A (Tc) 70W (Tc) Through Hole TO-220 spot stock

Manufacturer Product Number
STP12N65M5
Description

STP12N65M5 N-Channel 650 V 8.5A (Tc) 70W (Tc) Through Hole TO-220 spot stock

Package Condition
Tube
Datasheet
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Product Descriptions

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.

Product Features

•      Extremely low RDS(on)

•      Low gate charge and input capacitance

•      Excellent switching performance

•      100% avalanche tested

Product Applications

•      Switching applications

Product Specification

Attribute Attribute value
ANSM-Part# ANSM-STP12N65M5
Category Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr -
Series MDmesh™ V
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 430mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 100 V
Power Dissipation (Max) 70W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP12

Product Photos

STP12N65M5

For more product information, please download the PDF

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Hot-selling and scarce STP12N65M5 N-Channel 650 V 8.5A (Tc) 70W (Tc) Through Hole TO-220 spot stock

STP12N65M5 N-Channel 650 V 8.5A (Tc) 70W (Tc) Through Hole TO-220 spot stock

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