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Original IPD50N06S4L12ATMA2 MOSFET N-CH 60V 50A TO252-31 N-Channel 60 V 50A (Tc) 50W (Tc) Surface Mount PG-TO252-3-11
Manufacturer
Manufacturer Product Number
IPD50N06S4L12ATMA2
Description
IPD50N06S4L12ATMA2 MOSFET N-CH 60V 50A TO252-31 N-Channel 60 V 50A (Tc) 50W (Tc) Surface Mount PG-TO252-3-11
| Part# | IPD50N06S4L12ATMA2 |
| Type： | Transistors |
| Manufactor | INFINEON |
| Describe | NEW |
| Supplier Device Packaging | TO-252 |
|
TYPE |
DESCRIPTION |
|---|---|
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
Infineon Technologies |
|
Series |
OptiMOS™ |
|
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
|
Part Status |
Active |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
60 V |
|
Current - Continuous Drain (Id) @ 25°C |
50A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
|
Rds On (Max) @ Id, Vgs |
12mOhm @ 50A, 10V |
|
Vgs(th) (Max) @ Id |
2.2V @ 20µA |
|
Gate Charge (Qg) (Max) @ Vgs |
40 nC @ 10 V |
|
Vgs (Max) |
±16V |
|
Input Capacitance (Ciss) (Max) @ Vds |
2890 pF @ 25 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
50W (Tc) |
|
Operating Temperature |
-55°C ~ 175°C (TJ) |
|
Grade |
Automotive |
|
Qualification |
AEC-Q101 |
|
Mounting Type |
Surface Mount |
|
Supplier Device Package |
PG-TO252-3-11 |
|
Package / Case |
TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
Base Product Number |
IPD50 |
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IPD50N06S4L12ATMA2 MOSFET N-CH 60V 50A TO252-31 N-Channel 60 V 50A (Tc) 50W (Tc) Surface Mount PG-TO252-3-11
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