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High voltage N-channel IGBT field-effect transistor NCE1012E SOT523
Manufacturer
Manufacturer Product Number
NCE1012E
Description
high-voltage N-channel IGBT field-effect transistor
Package Condition
Tape and Reel
Part# | NCE1012E |
Type: | high-voltage N-channel IGBT field-effect transistor |
Manufactor | NCE |
DC | NEW |
Describe | SOT523 |
Supplier Device Packaging | REEL |
Technology | Trench |
Polarity | N |
BVDSS(V) | 20 |
ID(A) | 0.6 |
VTH(V) | 0.75 |
RDS(ON)@4.5VTyp(mΩ) | 210 |
QG(nC) | 60 |
PD(W) | 1 |
PKG | / |
Product Data Book:https://allnewsemi.shop/img/cms/NCE/NCE1012E.pdf
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