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High voltage N-channel IGBT MOS transistor NCE65T900 TO220 chip original stock
Manufacturer
Manufacturer Product Number
NCE65T900
Description
high-voltage N-channel IGBT field-effect transistor
Package Condition
TUBE
| Part# | NCE65T900 |
| Type： | High-voltage N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-220 |
| Supplier Device Packaging | TUBE |
| Technology | SJ-Ⅲ |
| Polarity | N |
| BVDSS(V) | 650 |
| ID(A) | 5 |
| VTH(V) | 3.5 |
| RDS(ON)@10VTyp(mΩ) | 750 |
| PD(W) | 46 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE65T900.pdf
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high-voltage N-channel IGBT field-effect transistor
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