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High voltage P-channel IGBT field-effect transistor spot supply NCE15P25J TO220 chip
Manufacturer Product Number
NCE15P25J
Description
high-voltage P-channel IGBT field-effect transistor
Package Condition
TUBE
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| Part# | NCE15P25J |
| Type： | high-voltage P-channel IGBT field-effect transistor |
| Manufactor | - |
| DC | NEW |
| Describe | TO-220 |
| Supplier Device Packaging | TUBE |
| Technology | Trench |
| Polarity | P |
| BVDSS(V) | -155 |
| ID(A) | -25 |
| VTH(V) | -1.9 |
| RDS(ON)@10VTyp(mΩ) | 120 |
| RDS(ON)@4.5VTyp(mΩ) | 131 |
| QG(nC) | 137 |
| PD(W) | 160 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE/NCE15P25J.pdf
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high-voltage P-channel IGBT field-effect transistor
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