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Hot sale Original FDC5614P Transistor FET MOSFET(Metal Oxide) P-CH 60V 3A SUPERSOT6 P-Channel 60 V 3A(Ta) 1.6W(Ta) SOT-23-6 Thin
Manufacturer Product Number
FDC5614P
Description
Original FDC5614P Transistor FET MOSFET(Metal Oxide) P-CH 60V 3A SUPERSOT6 P-Channel 60 V 3A(Ta) 1.6W(Ta) SOT-23-6 Thin
Package Condition
Tape & Reel (TR)
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Product Details
| Description The FDC5614P is a -60V P-channel logic level PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66 lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or it can minimize the undesirable voltage spikes. This product is general usage and suitable for many different applications. Features • –3 A, –60 V. RDS(ON) = 0.105 Ω @ VGS = –10 V RDS(ON) = 0.135 Ω @ VGS = –4.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) Application • DC-DC converters • Load switch • Power management |
Product Description
| Type | Description |
| ANSC PART# | ANSC- FDC5614P |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | Original |
| Series | PowerTrench® |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 759 pF @ 30 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SuperSOT™-6 |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Base Product Number | FDC5614 |
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Original FDC5614P Transistor FET MOSFET(Metal Oxide) P-CH 60V 3A SUPERSOT6 P-Channel 60 V 3A(Ta) 1.6W(Ta) SOT-23-6 Thin
33000In stock:
Can ship immediately