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Hot sale Original 2N6796 MOSFET N-CH TO39 N-Channel 100V 8A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39

Manufacturer Product Number
2N6796
Description

2N6796 N-Channel 100 V 8A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39

Package Condition
Bulk
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Product Details

DESCRIPTION

This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

FEATURES

• Low RDS(on)
• Ease of Paralleling
• Qualified to MIL-PRF-19500/557

Product Description

Type

Description

ANSC PART# ANSC - 2N6796

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

-

Series

-

Packaging

Bulk

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

180mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4V @ 250mA

Gate Charge (Qg) (Max) @ Vgs

6.34 nC @ 10 V

Vgs (Max)

±20V

FET Feature

-

Power Dissipation (Max)

800mW (Ta), 25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Grade

-

Qualification

-

Mounting Type

Through Hole

Supplier Device Package

TO-39

Package / Case

TO-205AF Metal Can

Actual image of the product 

2N6796

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Hot sale Original 2N6796 MOSFET N-CH TO39 N-Channel 100V 8A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39

2N6796 N-Channel 100 V 8A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39

Write your review

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QUANTITY
All prices are in USD

Factory packaging/ANSC packaging

Quantity Price You Save
10 $18.06 Up to $49.30
100 $17.73 Up to $526.00

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