Hot sale Original BUK9Y153-100E,115 Transistors MOSFET N-Channel 100 V 9.4A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8

Product Overview 

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 9.5 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 716pF @ 25V.This device has a continuous drain current (ID) of [9.4A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.A maximum pulsed drain current of 38A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 100V.

Product Features  

the avalanche energy rating (Eas) is 9.5 mJ
a continuous drain current (ID) of 9.4A
a drain-to-source breakdown voltage of 100V voltage
based on its rated peak drain current 38A.

Product Applications

There are a lot of Nexperia USA Inc.
BUK9Y153-100E,115 applications of single MOSFETs transistors.

· Uninterruptible Power Supply

· AC-DC Power Supply

· Synchronous Rectification for ATX 1 Server I Telecom PSU

· Motor drives and Uninterruptible Power Supplies

· Micro Solar Inverter

· DC/DC converters

· Power Tools

· Motor Drives and Uninterruptible Power Supples

· Synchronous Rectification

· Battery Protection Circuit

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