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High quality sales of PSMN8R2-80YS N-channel LFPAK 80V 8.5 mΩ 130W (Tc) standard level MOSFET Power-SO8
Trans MOSFET N-CH 80V 82A 5-Pin(4+Tab) LFPAK T/R
Product Features
• Advanced TrenchMOS provides low RDSon and low gate charge
• High efficiency gains in switching power converters
• Improved mechanical and thermal characteristics
• LFPAK provides maximum power density in a Power SO8 package
Product DESCRIPTION
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
Product Applications
• DC-to-DC converters
• Lithium-ion battery protection
• Load switching
• Motor control
• Server power supplies
Specifications
Attribute | Attribute value |
ANSM-Part# | ANSM-PSMN8R2-80YS |
Category | Discrete Semiconductor Products |
Transistors | |
FETs, MOSFETs | |
Single FETs, MOSFETs | |
Mfr | Nexperia USA Inc. |
Series | - |
Package | Tape & Reel (TR) |
Cut Tape (CT) | |
Digi-Reel® | |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80 V |
Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 8.5mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3640 pF @ 40 V |
FET Feature | - |
Power Dissipation (Max) | 130W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | LFPAK56, Power-SO8 |
Package / Case | SC-100, SOT-669 |
Base Product Number | PSMN8R2 |
Actual product photos
Product Data Book:
For more product information, please download the PDF
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