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Hot-selling and scarce IDH08SG60C 3rd Generation thinQ!TM SiC Schottky Diode TO220-2 spot stock
Manufacturer Product Number
IDH08SG60C
Description
IDH08SG60C 3rd Generation thinQ!TM SiC Schottky Diode TO220-2 spot stock
Package Condition
Tube
Datasheet
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Product Features
•Revolutionary semiconductor material -Silicon Carbide
•Switching behavior benchmark
•No reverse recovery /No forward recovery
•Temperature independent switching behavior
•High surge current capability
•Pb-free lead plating;RoHS compliant
•Qualified according to JEDEC 1)for target applications
•Breakdown voltage tested at 20mA2)
•Optimized for high temperature operation
•Lowest Figure of Merit QC/IF
Product Photos
For more product information, please download the PDF
WhenCE is HIGH (deselected),the device assumes a standby mode at which the power dissipation can be reduced down to250 µW (typical) with CMOS input levels.
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IDH08SG60C 3rd Generation thinQ!TM SiC Schottky Diode TO220-2 spot stock
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