Hot-selling and scarce MT49H64M9FM-25E:B DRAM Memory IC 576Mbit Parallel 400 MHz 15 ns 144-µBGA spot stock

Product Features

• 533 MHz DDR operation (1.067 Gb/s/pin data rate)

• 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency)

• Organization

– 64 Meg x 9, 32 Meg x 18, and 16 Meg x 36 I/O

– 8 banks

• Reduced cycle time (15ns at 533 MHz)

• Nonmultiplexed addresses (address multiplexing option available)

• SRAM-type interface

• Programmable READ latency (RL), row cycle time, and burst sequence length

• Balanced READ and WRITE latencies in order to op timize data bus utilization

• Data mask for WRITE commands

• Differential input clocks (CK, CK#)

• Differential input data clocks (DKx, DKx#)

• On-die DLL generates CK edge-aligned data and output data clock signals

• Data valid signal (QVLD)

• 32ms refresh (16K refresh for each bank; 128K re fresh command must be issued in total each 32ms)

• HSTL I/O (1.5V or 1.8V nominal)

• 25-60Ω matched impedance outputs

• 2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O

• On-die termination (ODT) RTT

Product Specification

Product Photos

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