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CY7C1460AV33-250AXC SRAM - Synchronous SDR Memory IC 36Mbit Parallel 250 MHz 2.6 ns 100-TQFP spot stock

Manufacturer Product Number
CY7C1460AV33-250AXC
Description

CY7C1460AV33-250AXC SRAM - Synchronous, SDR Memory IC

Package Condition
Tray
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Product Descriptions

The CY7C1460AV33/CY7C1462AV33/CY7C1464AV33 are 3.3V, 1M x 36/2M x 18/512K x72 Synchronous pipelined burst SRAMs with No Bus Latency™ (NoBL™) logic, respectively. They are designed to support unlimited true back-to-back Read/Write operations with no wait states. The CY7C1460AV33/ CY7C1462AV33/CY7C1464AV33 are equipped with the advanced (NoBL) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data in systems that require frequent Write/Read transitions. The CY7C1460AV33/CY7C1462AV33/CY7C1464AV33 are pin compatible and functionally equivalent to ZBT devices.

All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. The clock input is qualified by the Clock Enable (CEN) signal, which when deasserted suspends operation and extends the previous clock cycle.

Write operations are controlled by the Byte Write Selects (BWa–BWh for CY7C1464AV33, BWa–BWd for CY7C1460AV33 and BWa–BWb for CY7C1462AV33) and a Write Enable (WE) input. All writes are conducted with on-chip synchronous self timed write circuitry.

Three synchronous Chip Enables (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output tristate control. To avoid bus contention, the output drivers are synchronously tristated during the data portion of a write sequence.

Product Features

■ Pin compatible and functionally equivalent to ZBT

■ Supports 250 MHz Bus Operations with Zero Wait States

❐ Available speed grades are 250, 200 and 167 MHz

■ Internally self timed Output Buffer Control to eliminate the need to use Asynchronous OE

■ Fully registered (inputs and outputs) for Pipelined Operation

■ Byte Write Capability

■ 3.3V Power Supply

■ 3.3V/2.5V I/O Power Supply

■ Fast Clock-to-output times

❐ 2.6 ns (for 250 MHz device)

■ Clock Enable (CEN) Pin to suspend operation

■ Synchronous self timed Writes

■ CY7C1460AV33, CY7C1462AV33 available in JEDEC-standard Pb-Free 100-pin TQFP, Pb-Free and non-Pb-Free 165-ball FBGA package. CY7C1464AV33 available in Pb-Free and non-Pb-Free 209-ball FBGA package

■ IEEE 1149.1 JTAG-Compatible Boundary Scan

■ Burst Capability—Linear or Interleaved Burst Order

■ “ZZ” Sleep Mode Option and Stop Clock Option

Product Specification

Attribute Attribute value
ANSM-Part# ANSM-CY7C1460AV33-250AXC
Category Integrated Circuits (ICs)
Memory
Memory
Mfr -
Series NoBL™
Packaging Tray
Part Status Obsolete
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous, SDR
Memory Size 36Mbit
Memory Organization 1M x 36
Memory Interface Parallel
Clock Frequency 250 MHz
Access Time 2.6 ns
Voltage - Supply 3.135V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 100-LQFP
Supplier Device Package 100-TQFP (14x20)
Base Product Number CY7C1460

Product Photos

CY7C1460AV33-250AXC

For more product information, please download the PDF

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CY7C1460AV33-250AXC SRAM - Synchronous SDR Memory IC 36Mbit Parallel 250 MHz 2.6 ns 100-TQFP spot stock

CY7C1460AV33-250AXC SRAM - Synchronous, SDR Memory IC

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