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Hot-selling and scarce M29W256GH70N6E Parallel NOR Flash Embedded Memory TSSOP56 spot stock
Manufacturer Product Number
M29W256GH70N6E
Description
M29W256GH70N6E Parallel NOR Flash Embedded Memory TSSOP56 spot stock
Package Condition
Tray
Datasheet
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Product Features
• Supply voltage
– VCC = 2.7–3.6V (program, erase, read)
– VCCQ = 1.65–3.6V (I/O buffers)
– VPPH = 12V for fast program (optional)
• Asynchronous random/page read
– Page size: 8 words or 16 bytes
– Page access: 25ns, 30ns
– Random access: 60ns1, 70ns, 80ns
• Fast program commands: 32-word (64-byte) write buffer
• Enhanced buffered program commands: 256-word
• Program time
– 16µs per byte/word (TYP)
– Chip program time: 10s with VPPH and 16s without VPPH
• Memory organization
– Uniform blocks: 256 main blocks, 128KB, or 64-Kwords each
• Program/erase controller
– Embedded byte/word program algorithms
• Program/erase suspend and resume capability
– Read from any block during a PROGRAM SUSPEND operation
– Read or program another block during an ERASE SUSPEND operation
• Unlock bypass, block erase, chip erase, write to buffer and program
– Fast buffered/batch programming
– Fast block/chip erase
Product Specification
| Attribute | Attribute value |
| ANSM-Part# | ANSM-M29W256GH70N6E |
| Category | Integrated Circuits (ICs) |
| Memory | |
| Memory | |
| Mfr | - |
| Packaging | Tray |
| Part Status | Obsolete |
| DigiKey Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 256Mbit |
| Memory Organization | 32M x 8, 16M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 70ns |
| Access Time | 70 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 56-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 56-TSOP |
| Base Product Number | M29W256 |
Product Photos
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M29W256GH70N6E Parallel NOR Flash Embedded Memory TSSOP56 spot stock
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