Hot-selling and scarce BGF944 GSM900 EDGE power module SMD spot stock

Product Descriptions

17 W LDMOS power amplifier module for base station amplifier applications in the 920 to 960 MHz band.

Product Features

•  Typical GSM EDGE performance at a supply voltage of 26 V:

–  Output power = 2.5 W

–  Gain = 29 dB

–  Efficiency = 15%

–  ACPR < −65 dBc at 400 kHz

–  rms EVM < 0 .4%

–  peak EVM < 1 .2%

•  Low distortion to a GSM EDGE signal

•  Excellent 2-tone performance

•  Low die temperature due to copper flange

•  Integrated temperature compensated bias

•  50 Ω input/output impedance

•  Flat gain over frequency band.

Product Applications

•  Base station RF power amplifiers in the 920 to 960 MHz frequency band

•  GSM, GSM EDGE, multi carrier applications

•  Macrocell (driver stage) and Microcell (final stage).

Product Photos

​

For more product information, please download the PDF