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Hot-selling and scarce STP5N80K5 N-channel 800 V, 1.50 Ω typ 4 A MDmesh K5 Power MOSFET in a TO-220 package spot stock
Manufacturer Product Number
STP5N80K5
Description
STP5N80K5 N-channel 800 V, 1.50 Ω typ 4 A MDmesh K5 Power MOSFET in a TO-220 package spot stock
Package Condition
Tube
Datasheet
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Product Descriptions
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Product Features
• Very low FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
Product Applications
• Switching applications
Product Specifications
| Attribute | Attribute value |
| ANSM-Part# | ANSM-STP5N80K5 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | - |
| Series | MDmesh™ |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.75Ohm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 177 pF @ 100 V |
| Power Dissipation (Max) | 60W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
| Base Product Number | STP5N80 |
Product Photos
For more product information, please download the PDF
WhenCE is HIGH (deselected),the device assumes a standby mode at which the power dissipation can be reduced down to250 µW (typical) with CMOS input levels.
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STP5N80K5 N-channel 800 V, 1.50 Ω typ 4 A MDmesh K5 Power MOSFET in a TO-220 package spot stock
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