Hot-selling and scarce CY7C1041DV33-10ZSXI 4-Mbit Static RAM TSSOP spot stock

Product Descriptions

The CY7C1041DV33 is a high performance CMOS Static RAM organized as 256 K words by 16-bits.To write to the device,take chip enable (CE)and write enable (WE)inputs LOW.If byte low enable (BLE)is LOW,then data from I/O pins (I/O 0 to I/O 7)is written into the location specified on the address pins (A 0to A 17). If byte high enable (BHE)is LOW,then data from I/O pins (I/O 8 to I/O 15)is written into the location specified on the address pins(A 0to A 17).

To read from the device,take chip enable (CE)and output enable(OE)LOW while forcing the write enable (WE)HIGH.If BLE is LOW,then data from the memory location specified by the address pins appears on I/O 0 to I/O 7 .If BHE is LOW,then data from memory appears on I/O 8 to I/O 15 .See the Truth Table on page 10 for a complete description of read and write modes. 

The input and output pins (I/O 0 to I/O 15)are placed in a high impedance state when the device is deselected (CE HIGH), outputs are disabled (OE HIGH),BHE and BLE are disabled(BHE,BLE HIGH),or during a write operation (CE LOW and WE LOW).

The CY7C1041DV33 is available in a standard 44-pin 400-mil wide SOJ and 44-pin TSOP II package with center power and ground (revolutionary)pinout and a 48-ball fine-pitch ball grid array (FBGA)package.

Product Features

■ Temperature ranges

❐ Industrial:–40 °C to 85 °C

❐ Automotive-A [1]:–40 °C to 85 °C

❐ Automotive-E [1]:–40 °C to 125 °C

■ Pin and function compatible with CY7C1041CV33

■ High speed

❐ tAA =10 ns

■ Low active power

❐ ICC =90 mA at 10 ns (industrial)

■ Low CMOS standby power

❐ ISB2 =10 mA

■ 2.0 V data retention

■ Automatic power-down when deselected

■ TTL compatible inputs and outputs

■ Easy memory expansion with CE and OE features

■ Available in Pb-free 48-ball VFBGA,44-pin (400-mil)molded SOJ,and 44-pin TSOP II Packages

Product Photos

For more product information, please download the PDF