Hot-selling and scarce MT58L64L18FT-10 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM QFP100 spot stock

Product Descriptions

The Micron^®   SyncBurst^™    SRAM family employs highspeed,low-power CMOS designs that are fabricated using an advanced CMOS process.

The MT58L64L18F and MT58L32L32/36F 1Mb SRAMs integrate a 64K x 18,32K x 32, or 32K x 36 SRAM core with advanced  synchronous  peripheral  circuitry  and  a  2-bit burst counter.All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input​ (CLK). The synchronous inputs include all addresses, all data inputs,active LOW chip enable (CE#),two additional chip enables for easy depth expansion (CE2, CE2#), burst control inputs (ADSC#,ADSP#,ADV#),byte write enables(BWx#)and global write (GW#).

Product Features

•  Fast clock and OE# access times

•  Single +3.3V +0.3V/-0.165V power supply (VDD)

•  Separate +3.3V +0.3V/-0.165V isolated output buffer supply (VDDQ)

•  SNOOZE MODE for reduced-power standby

•  Common data inputs and data outputs

•  Individual BYTE WRITE control and GLOBAL WRITE

•  Three chip enables for simple depth expansion and address pipelining

•  Clock-controlled and registered addresses, data I/Os and control signals

•  Internally self-timed WRITE cycle

•  Burst control pin (interleaved or linear burst)

•  Automatic power-down for portable applications

•  100-lead TQFP package for high density, high speed

•  Low capacitive bus loading

•  x18, x32 and x36 versions available

Product Photos

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